MBD110DWT1G, MBD330DWT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A) MBD110DWT1G
MBD330DWT1G
V(BR)R
7.0
30
10
?
?
?
V
Diode Capacitance
(VR
= 0, f = 1.0 MHz, Note 1) MBD110DWT1G
CD
?
0.88
1.0
pF
Total Capacitance
(VR
= 15 Volts, f = 1.0 MHz) MBD330DWT1G
CT
?
0.9
1.5
pF
Reverse Leakage
(VR
= 3.0 V) MBD110DWT1G
(VR
= 25 V) MBD330DWT1G
IR
?
?
0.02
13
0.25
200
A
nA
Noise Figure
(f = 1.0 GHz, Note 2) MBD110DWT1G
NF
?
6.0
?
dB
Forward Voltage
(IF
= 10 mA) MBD110DWT1G
(IF
= 1.0 mA) MBD330DWT1G
(IF
= 10 mA)
VF
?
?
?
0.5
0.38
0.52
0.6
0.45
0.6
V
ORDERING INFORMATION
Device
Marking
Package
Shipping?
MBD110DWT1G
M4
SC?88 / SOT?363
(Pb?Free)
3000 Units / Tape & Reel
MBD330DWT1G
T4
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相关PDF资料
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